Oxidation-rate dependence of phosphorus diffusivity in silicon

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Abstract
The diffusion of phosphorus in silicon at 1100°C in inert and three different oxidizing atmospheres has been investigated by using the standard two stages technique, and the results interpreted using the Kato and Nishi theoretical model. A linear relationship has been obtained between the silicon oxidation rate and the induced enhancement of phosphorus diffusivity, in agreement with the hypothesis of - excess interstitials generated at the inward moving oxide-silicon interface. This enhancement has been demonstrated to be practically independent of the distance from the silicon surface. Finally a dual phosphorus diffusion mechanism has been suggested, with a dominant interstitialcy component in oxidizing atmospheres and with a dominant vacancy (E-centre) component in inert atmospheres.