Experimental-Condition Dependence of Phosphorus Diffusivity in Silicon
- 28 September 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 25 (13) , 856-858
- https://doi.org/10.1103/physrevlett.25.856
Abstract
Radiophosphorus diffusion in (111) silicon, under intrinsic conditions from an oxide source in air and from doped silicon sources (epitaxial, polycrystalline, and vapor phase) in a hydrogen atmosphere, has conclusively demonstrated the pronounced effects of both the free surface and the redox reaction on the apparent phosphorus diffusivity in silicon.Keywords
This publication has 4 references indexed in Scilit:
- Oxidation, defects and vacancy diffusion in siliconPhilosophical Magazine, 1969
- Stress at the Si—SiO2interface and its relationship to interface statesIEEE Transactions on Electron Devices, 1968
- Diffusion of Phosphorus into SiliconJournal of the Physics Society Japan, 1962
- The Diffusion of Phosphorus in SiliconJournal of the Electrochemical Society, 1962