Effects of Oxidation on Aluminum Diffusion in Silicon
- 1 January 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (1R) , 56-60
- https://doi.org/10.1143/jjap.21.56
Abstract
Aluminum diffusion in Si affected by thermal oxidation is investigated. Aluminum diffusion in (100) oriented Si is enhanced by thermal oxidation. On the other hand, that in (111) oriented Si is enhanced at low temperature but retarded at high temperature. The difference in the diffusion of Al in Si masked with double-layered SiO2–Si3N4 films and with directly-formed Si3N4 films is found to be very small compared to the case of B and P. Furthermore, the addition of HCl to the oxidizing ambient is found to reduce the anomalous diffusion caused by oxidation. These experimental results are explained assuming that the diffusion of Al in Si proceeds by the interstitialcy mechanism in the Si.Keywords
This publication has 8 references indexed in Scilit:
- Retardation of Sb Diffusion in Si during Thermal OxidationJapanese Journal of Applied Physics, 1981
- Anomalous Phosphorus Diffusion in Si Directly Masked with Si3N4 FilmsJapanese Journal of Applied Physics, 1981
- Oxidation Enhanced Diffusion of Boron and Phosphorus in (100) SiliconJournal of the Electrochemical Society, 1980
- Oxidation-enhanced diffusion of arsenic and phosphorus in near-intrinsic 〈100〉 siliconApplied Physics Letters, 1978
- Boron in Near‐Intrinsic and Silicon under Inert and Oxidizing Ambients—Diffusion and SegregationJournal of the Electrochemical Society, 1978
- Restrained Diffusion of Boron and Phosphorus in Silicon under HCl ‐ Added Oxygen AtmosphereJournal of the Electrochemical Society, 1976
- Oxidation-rate dependence of phosphorus diffusivity in siliconPhilosophical Magazine, 1976
- Orientation dependence of the diffusion of boron in siliconSolid-State Electronics, 1971