Anomalous Phosphorus Diffusion in Si Directly Masked with Si3N4 Films
- 1 April 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (4)
- https://doi.org/10.1143/jjap.20.791
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The effect of oxidation on the diffusion of phosphorus in siliconJournal of Applied Physics, 1979
- Boron in Near‐Intrinsic and Silicon under Inert and Oxidizing Ambients—Diffusion and SegregationJournal of the Electrochemical Society, 1978
- Oxidation-rate dependence of phosphorus diffusivity in siliconPhilosophical Magazine, 1976