100 GHz active electronic probe for on-wafer S-parameter measurements
- 22 June 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (13) , 828-830
- https://doi.org/10.1049/el:19890558
Abstract
We report the development of an active electronic probe for 100 GHz on-wafer S-parameter measurements. Integrated on the substrate of this wafer probe were a quintupler for 100 GHz stimulus signal generation, two directional couplers for incident and reflected signals sampling, and two newly developed harmonic mixers to down-convert these 100 GHz signals to 20 MHz. We have also demonstrated all-electronic on-wafer 75-100 GHz two-port S-parameter measurements using these probes.Keywords
This publication has 1 reference indexed in Scilit:
- Picosecond Electrical Pulse for VLSI Electronics CharacterizationPublished by Springer Nature ,1987