Transition metal silicides in silicon technology

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Abstract
Studies of the properties and characteristics of transition metal silicides have been stimulated by their (potential) use in integrated circuit technology. This review describes some of the most recent studies in this field of research. Formation mechanisms of silicides are discussed in some detail. A division is made between near-noble and refractory metal silicidation which aids in the understanding of differences in formation mechanisms of the various silicides. The evolution of the components of thin film stress during metal silicidation is also elucidated. In the review of the practical uses of these materials, emphasis is placed on specific processes involving laterally confined (self-aligned) silicide film formation as more advanced applications require film formation only in certain localized regions on a Si wafer.