Optical properties of semiconducting iron disilicide thin films

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Abstract
Iron disilicide thin films were prepared by furnacereaction of ion beamsputterediron layers with single‐crystal silicon wafers and with low‐pressure chemical vapor deposition (LPCVD) polycrystalline siliconthin films. X‐ray diffraction indicates the films are single‐phase, orthorhombic, β‐FeSi2. Impurity levels are below the detection limit of Auger spectroscopy. Normal incidence spectral transmittance and reflectance data indicate a minimum, direct energy gap of 0.87 eV. The apparent thermal activation energy of the resistivity in the intrinsic regime is about half of this minimum optical gap. With such a direct band gap, the material may be suitable for the development of both light‐sensitive and light‐emitting thin‐film devices within the silicon microelectronics technology.

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