IrSi1.75 a new semiconductor compound
- 1 April 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4) , 3342-3343
- https://doi.org/10.1063/1.330999
Abstract
Optical and Hall effect measurements on thin film layers of polycrystalline IrSi1.75 show that this material is a semiconductor. The band gap is approximately 1.2 eV. The films obtained saturated with silicon were p‐type with a charge carrier density of the order of 4×1017 cm−3.This publication has 8 references indexed in Scilit:
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