Measurements of the rectifying barrier heights of the various iridium silicides with n-Si
- 15 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (2) , 202-204
- https://doi.org/10.1063/1.91037
Abstract
The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n‐type silicon substrates and Ir, IrSi, IrSi1.75, and IrSi3 have been determined by means of photoresponse, capacitance, and forward I/V measurements. In all cases the barrier height values are quite high, in excess of 0.85 eV. For Ir, IrSi, and IrSi1.75 the values obtained agree with values previously derived from forward I/V curves.Keywords
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