Effect of Material Properties on the Performance of a-Si,Ge:H,F Photodetectors
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Transient and steady-state photoconductivity in a-Si1−xGex:H,F alloysJournal of Non-Crystalline Solids, 1987
- Properties of a‐Si,Ge:H,F alloys prepared by rf glow discharge in an ultrahigh vacuum reactorJournal of Vacuum Science & Technology A, 1986
- Photoelectric application of a-Si:H and related material-image devicesJournal of Non-Crystalline Solids, 1985
- High quantum efficiency amorphous silicon photodetectors with picosecond response timesApplied Physics Letters, 1984
- Properties of multilayered photoreceptor with amorphous silicon and its alloys, and application to optical printerJournal of Non-Crystalline Solids, 1983
- Optical and Infrared DetectorsPublished by Springer Nature ,1980
- Electronic Processes in Non-Crystalline MaterialsPhysics Today, 1972
- Zum Mechanismus des lichtelektrischen Prim rstromes in isolierenden KristallenThe European Physical Journal A, 1932