High quantum efficiency amorphous silicon photodetectors with picosecond response times
- 15 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (4) , 450-452
- https://doi.org/10.1063/1.94763
Abstract
Amorphous silicon Schottky barrier photodetectors with internal quantum efficiencies of 36% and sampling oscilloscope limited response times of 40 ps (full width at half-maximum) have been fabricated. Utilizing ultrathin films of rf glow discharge deposited hydrogenated amorphous silicon, carrier sweep-out was achieved in a new microstrip transmission line structure. The performance of these devices, for picosecond pulse detection, is now comparable to that of crystalline semiconductor detectors.Keywords
This publication has 12 references indexed in Scilit:
- Periodically structured amorphous silicon detectors with improved picosecond responsivityApplied Physics Letters, 1984
- Continuous-wave mode-locked Nd:YAG-pumped subpicosecond dye lasersOptics Letters, 1983
- Picosecond CdSe photodetectorApplied Physics Letters, 1983
- Picosecond photoconductivity in germanium filmsApplied Physics Letters, 1981
- Picosecond transient photocurrents in amorphous siliconPhysical Review B, 1981
- Surface and thickness effects in the luminescence of amorphous Si:HApplied Physics Letters, 1980
- Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductorsApplied Physics Letters, 1980
- Internal photoemission in hydrogenated amorphous-Si filmsApplied Physics Letters, 1980
- Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous siliconPhilosophical Magazine Part B, 1980
- An amorphous silicon photodetector for picosecond pulsesApplied Physics Letters, 1980