Picosecond CdSe photodetector
- 1 June 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (11) , 975-977
- https://doi.org/10.1063/1.93820
Abstract
The performance of a photoconductive device in which an evaporated CdSe film is used as the semiconductor medium is described. The results indicate an ultrafast response and a recovery time ∼20 ps.Keywords
This publication has 10 references indexed in Scilit:
- 20-GHz bandwidth GaAs photodiodeApplied Physics Letters, 1983
- New graded band-gap picosecond phototransistorApplied Physics Letters, 1983
- Bias-free selectively doped AlxGa1−x As-GaAs picosecond photodetectorsApplied Physics Letters, 1982
- Oscilloscope measurement of picosecond voltage pulsesApplied Physics Letters, 1982
- Picosecond InP optoelectronic switchesApplied Physics Letters, 1982
- A novel heterostructure interdigital photodetector (HIP) with picosecond optical responseIEEE Electron Device Letters, 1981
- High-speed Ga 0.47 In 0.53 as photoconductive detector for picosecond light pulsesElectronics Letters, 1981
- Thin film photoconductor mounting schemes for picosecond optical detectorsReview of Scientific Instruments, 1981
- Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductorsApplied Physics Letters, 1980
- An amorphous silicon photodetector for picosecond pulsesApplied Physics Letters, 1980