Picosecond InP optoelectronic switches
- 15 March 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6) , 447-449
- https://doi.org/10.1063/1.93143
Abstract
Proton bombardment is used to increase the response speed of InP optoelectronic switches. Photoconductivity measurements indicate response times following bombardment of <100 ps, with the electron mobility estimated to be ⩾600 cm2/Vs. This mobility is over an order of magnitude larger than that observed in similar high-resistivity devices of comparable speed fabricated in germanium or silicon-on-sapphire.Keywords
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