Fast photoconductive detector using p-In0.53Ga0.47As with response to 1.7 μm
- 1 January 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (1) , 27-29
- https://doi.org/10.1063/1.92114
Abstract
Photoconductive detectors, fabricated from p‐type In0.53Ga0.47As using strip‐line techniques, exhibit rise and fall times of 45 and 70 psec FWHM. This performance is consistent with a peak electron drift velocity of 2.1×107 cm/sec at a field of ∼3.5 kV/cm and represents the fastest reported detector response for the 1.0–1.7‐μm wavelength range.Keywords
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