Velocity-field characteristics of Ga1−xInxP1−yAsy quaternary alloys
- 1 March 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (5) , 242-244
- https://doi.org/10.1063/1.89350
Abstract
The electron drift‐velocity–electric‐field relationship has been calculated for the Ga1−xInxP1−yAsy quaternary alloy using the Monte Carlo method. Emphasis has been placed on the compositional range for which the alloy is lattice matched to GaAs and InP. These calculations suggest that this quaternary offers promise as a material for microwave semiconductor devices, including field‐effect transistors and transferred electron devices.Keywords
This publication has 18 references indexed in Scilit:
- Pulsed room-temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV)Applied Physics Letters, 1976
- High-quantum-efficiency photoemission from an InGaAsP photocathodeApplied Physics Letters, 1976
- Homogeneous or inhomogeneous line broadening in a semiconductor laser: Observations on In1−xGaxP1−zAsz double heterojunctions in an external grating cavityApplied Physics Letters, 1976
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Efficient lattice-matched double-heterostructure LED’s at 1.1 μm from GaxIn1−xAsyP1−yApplied Physics Letters, 1976
- Velocity-field relationship of InAs-InP alloys including the effects of alloy scatteringApplied Physics Letters, 1976
- Monte Carlo calculation of the velocity-field relationship for gallium nitrideApplied Physics Letters, 1975
- Bandgap and lattice constant of GaInAsP as a function of alloy compositionJournal of Electronic Materials, 1974
- High-field transport in gallium arsenide and indium phosphideJournal of Physics C: Solid State Physics, 1974
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970