Velocity-field relationship of InAs-InP alloys including the effects of alloy scattering
- 15 April 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (8) , 458-461
- https://doi.org/10.1063/1.88798
Abstract
The drift velocity–electric field relationship for the ternary alloy InAs1−xPx has been studied by the Monte Carlo methd. Random potential alloy scattering has been included in the calculations, along with polar optical scattering, intervalley scattering, acoustic scattering, piezoelectric scattering, and ionized impurity scattering. The low-field electron mobility has also been calculated throughout the compositional range for the alloy.Keywords
This publication has 20 references indexed in Scilit:
- Monte Carlo calculation of the velocity-field relationship for gallium nitrideApplied Physics Letters, 1975
- High-field transport in gallium arsenide and indium phosphideJournal of Physics C: Solid State Physics, 1974
- Parameters of electron transfer in InPJournal of Applied Physics, 1973
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970
- Optimum semiconductor for microwave devicesElectronics Letters, 1969
- The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1969
- Effects of Nonparabolicity on Non-Ohmic Transport in InSb and InAsPhysical Review B, 1968
- Intervalley-Scattering Selection Rules in III-V SemiconductorsPhysical Review B, 1966
- Quantum Theory of the Residual Electrical Resistivity of Disordered AlloysPhysical Review B, 1963
- The Electrical Resistance of Dilute Solid SolutionsMathematical Proceedings of the Cambridge Philosophical Society, 1936