High-quantum-efficiency photoemission from an InGaAsP photocathode
- 1 August 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (3) , 153-155
- https://doi.org/10.1063/1.89005
Abstract
An improved InGaAsP quaternary III‐V material has been developed for near‐ir photocathode applications. A quantum efficiency of 9.0% per incident photon at 1.06 μm from a 1.15‐eV band‐gap sample has been achieved at room temperature.Keywords
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