Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y
- 1 May 1980
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 9 (3) , 561-568
- https://doi.org/10.1007/bf02652936
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μmApplied Physics Letters, 1978
- Alloy scattering and high field transport in ternary and quaternary III–V semiconductorsSolid-State Electronics, 1978
- Velocity-field characteristics of Ga1−xInxP1−yAsy quaternary alloysApplied Physics Letters, 1977
- Electron mobility inalloysPhysical Review B, 1974
- ELECTRON MOBILITY IN GaAs1−xPx ALLOYSApplied Physics Letters, 1965
- Anomalous Mobility Effects in Some Semiconductors and InsulatorsJournal of Applied Physics, 1962
- Electron mobility of indium arsenide phosphide [In(AsyP1−y)]Journal of Physics and Chemistry of Solids, 1959