Optical properties of proton bombarded InP and GaInAsP
- 1 June 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (6) , 830-832
- https://doi.org/10.1109/jqe.1981.1071196
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- The electrical characteristics of ion implanted compound semiconductorsNuclear Instruments and Methods, 1981
- Gain spectra in GaInAsP/InP proton-bombarded stripe-geometry DH lasersIEEE Journal of Quantum Electronics, 1981
- Electroabsorption in GaInAsPApplied Physics Letters, 1979
- Threshold dependence on active-layer thickness in InGaAsP/InP d.h. lasersElectronics Letters, 1978
- Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral regionApplied Physics Letters, 1978
- Proton bombardment in InPSolid-State Electronics, 1977
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Optical and electrical properties of proton-bombarded p-type GaAsJournal of Applied Physics, 1973
- Optical waveguiding in proton-implanted GaAsApplied Physics Letters, 1972
- Chapter 6 Absorption near the Fundamental EdgePublished by Elsevier ,1967