Threshold dependence on active-layer thickness in InGaAsP/InP d.h. lasers
- 9 November 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (23) , 727-729
- https://doi.org/10.1049/el:19780491
Abstract
Room-temperature threshold current density Jth against active-layer thickness d is reported for pulsed InGaAsP/InP double-heterostructure lasers operating at wavelengths near 1.23 μm. For d ≈ 1 μm, Jth/d is 5.0 kA cm−2 μm−1, whereas the lowest threshold is 1.6 kA cm−2 for d ≈ 0.2 μm. The threshold dependence is fitted by a numerical calculation based on a two-parameter gain model.Keywords
This publication has 3 references indexed in Scilit:
- IntroductionPublished by Elsevier ,1977
- Heterostructure Junction LasersPublished by Elsevier ,1974
- Chapter 12 Optical ConstantsPublished by Elsevier ,1967