Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region
- 1 June 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (11) , 758-761
- https://doi.org/10.1063/1.89920
Abstract
The distribution coefficients for the growth of lattice‐matched InGaAsP on (100) ‐InP substrates in the 1.15–1.31‐μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ⩾48% at 1.27 μm.Keywords
This publication has 16 references indexed in Scilit:
- In1-xGaxAsyP1-y/InP DH lasers fabricated on InPIEEE Journal of Quantum Electronics, 1978
- Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP SubstratesJournal of the Electrochemical Society, 1978
- Growth of Lattice-Matched InGaAsP/InP Double-Heterostructures by the Two-Phase Supercooled Solution TechniqueJapanese Journal of Applied Physics, 1977
- 500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP SubstratesJapanese Journal of Applied Physics, 1977
- 1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room TemperatureJapanese Journal of Applied Physics, 1977
- In situ in etching technique for l.p.e. InPElectronics Letters, 1976
- Growth and characterization of InGaAsP–InP lattice-matched heterojunctionsJournal of Vacuum Science and Technology, 1976
- Liquid phase epitaxial In1−x Gax P1−z Asz/GaAs1−y Py quaternary (LPE)-ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K)Applied Physics Letters, 1974
- Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substratesApplied Physics Letters, 1973
- Growth and Characterization of InP-lnGaAsP Lattice-Matched HeterojunctionsJournal of the Electrochemical Society, 1973