The electrical characteristics of ion implanted compound semiconductors
- 1 May 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 182-183, 553-571
- https://doi.org/10.1016/0029-554x(81)90777-1
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- The effect of implant temperature on the electrical characteristics of ion implanted indium phosphideSolid-State Electronics, 1980
- Luminescence and crystal damage in ion implanted CdS and ZnOSolid-State Electronics, 1977
- Proton bombardment in InPSolid-State Electronics, 1977
- Microwave field-effect transistors from sulphur-implanted GaAsSolid-State Electronics, 1977
- GaAs planar gunn devices with sulfur-ion implanted n layersSolid-State Electronics, 1977
- Reduced lateral diffusion and reverse leakage in Be-implanted GaAs1−xPxdiodesSolid-State Electronics, 1977
- The nature of barrier height variations in alloyed Al-Si Schottky barrier diodesSolid-State Electronics, 1975
- PbS photodiodes fabricated by Sb+ ion implantationSolid-State Electronics, 1973
- Mg and Be Ion Implanted GaAsJournal of Applied Physics, 1972
- MIS electroluminescent diodes in ZnTeSolid-State Electronics, 1970