Microwave field-effect transistors from sulphur-implanted GaAs
- 31 May 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (5) , 459-462
- https://doi.org/10.1016/0038-1101(77)90141-1
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °CApplied Physics Letters, 1975
- Ion-implanted microwave field-effect transistors in GaAsSolid-State Electronics, 1975
- A new thin film encapsulant for ion-implanted GaAsThin Solid Films, 1975
- Electrical and cathodoluminescence measurements on ion implanted donor layers in GaAsSolid-State Electronics, 1975
- Gallium arsenide field-effect transistors by ion implantationJournal of Applied Physics, 1974
- A Chemical Etchant for the Selective Removal of GaAs Through SiO[sub 2] MasksJournal of the Electrochemical Society, 1974
- OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDEApplied Physics Letters, 1970
- EFFICIENT DOPING OF GaAs BY Se+ ION IMPLANTATIONApplied Physics Letters, 1969
- CONDUCTIVITY AND HALL MOBILITY OF ION-IMPLANTED SILICON IN SEMI-INSULATING GALLIUM ARSENIDEApplied Physics Letters, 1969
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958