Ion-implanted microwave field-effect transistors in GaAs
- 30 April 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (4) , 349-353
- https://doi.org/10.1016/0038-1101(75)90090-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Gallium arsenide field-effect transistors by ion implantationJournal of Applied Physics, 1974
- Si and GaAs 0.5 μ m-gate Schottky-barrier field-effect transistorsElectronics Letters, 1973
- X- and Ku-band amplifiers with GaAs Schottky-barriers field-effect transistorsIEEE Journal of Solid-State Circuits, 1973
- Submicron Epitaxial Films for GaAs Field Effect TransistorsJournal of the Electrochemical Society, 1973
- Influence of implantation temperature and surface protection on tellurium implantation in GaAsApplied Physics Letters, 1972
- Mg and Be Ion Implanted GaAsJournal of Applied Physics, 1972
- Properties of ion implanted silicon, sulfur, and carbon in gallium arsenideRadiation Effects, 1970
- Electrical properties of Cd, Zn and S ion-implanted layers in GaAsRadiation Effects, 1970
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- The Chemical Polishing of Gallium Arsenide in Bromine-MethanolJournal of the Electrochemical Society, 1963