OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
- 15 October 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (8) , 332-334
- https://doi.org/10.1063/1.1653422
Abstract
Backscattering of MeV 4He ions has been used to analyze the Ga and As content in SiO2 and Si3N4 dielectric layers deposited on single‐crystal GaAs substrates. Changes in impurity concentrations and distributions are seen after isothermal annealing at both 750 and 800°C. Evidence for Ga outdiffusion is clear.Keywords
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