Diffusion of gallium through a silicon dioxide layer
- 1 September 1964
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 25 (9) , 985-992
- https://doi.org/10.1016/0022-3697(64)90036-8
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964
- Diffusion of Boron in Silicon through Oxide LayerJapanese Journal of Applied Physics, 1962
- Impurity Redistribution and Junction Formation in Silicon by Thermal OxidationBell System Technical Journal, 1960
- Effect of Oxide Layers on the Diffusion of Phosphorus into SiliconJournal of Applied Physics, 1960
- Diffusion of phosphorus in silicon oxide filmJournal of Physics and Chemistry of Solids, 1959
- Diffusion of Gallium in SiliconJournal of Applied Physics, 1958
- Surface Protection and Selective Masking during Diffusion in SiliconJournal of the Electrochemical Society, 1957
- Rate Limitation at the Surface for Impurity Diffusion in SemiconductorsPhysical Review B, 1956