Rate Limitation at the Surface for Impurity Diffusion in Semiconductors
- 1 December 1956
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 104 (5) , 1242-1245
- https://doi.org/10.1103/physrev.104.1242
Abstract
When a rate limitation exists at the surface for impurity diffusion in semiconductors, the appropriate boundary condition is equivalent to the radiation boundary condition for the conductance of heat in solids. The international introduction of an additional external rate limitation allows the measurement of partition coefficients. Solutions to the diffusion equation are summarized and the resulting impurity distributions are discussed.Keywords
This publication has 10 references indexed in Scilit:
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- Chemical Interactions Among Defects in Germanium and SiliconBell System Technical Journal, 1956
- Resistance in a Liquid-Liquid Interface. III. The Effect of Molecular PropertiesThe Journal of Chemical Physics, 1955
- Diffusion von Antimon, Arsen und Indium in festem GermaniumZeitschrift für Naturforschung A, 1955
- Properties of Zinc-, Copper-, and Platinum-Doped GermaniumPhysical Review B, 1954
- Diffusion of Impurities in GermaniumPhysical Review B, 1954
- Diffusion of Donor and Acceptor Elements into GermaniumPhysical Review B, 1952
- Measurement of Diffusion in Semiconductors by a Capacitance MethodPhysical Review B, 1952
- Diffusion through an Interface—Binary SystemThe Journal of Chemical Physics, 1952
- Migration in crystal latticesTransactions of the Faraday Society, 1941