Bias-free selectively doped AlxGa1−x As-GaAs picosecond photodetectors

1 August 1982

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 41 (3) , 282-284
https://doi.org/10.1063/1.93465

Abstract

We demonstrate a novel AlxGa1−x As-GaAs picosecond photodetector which does not require any bias voltage. High-speed operation is achieved by an inherent capacitive coupling, a unique microwave mounting scheme, and a selectively doped structure. An observed rise time of 30 ps and a full width at half-maximum of 60 ps have been reproducibly obtained for a device with an area two orders of magnitude larger than a previously reported device. This detector enables monolithic integration with modulation-doped field-effect transistors. Furthermore, the results point to a possibility of achieving a bias-free detector for a gigabit-rate optical communication system.

Keywords

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