InGaAsP/InP photodiodes: Microplasma-limited avalanche multiplication at 1-1.3-µm wavelength
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (1) , 30-35
- https://doi.org/10.1109/jqe.1979.1069879
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Impact ionisation ratio in In 0.73 Ga 0.27 As 0.57 P 0.43Electronics Letters, 1978
- GaInAsP/InP avalanche photodiodesApplied Physics Letters, 1978
- Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μmElectronics Letters, 1977
- Electrical Properties of Copper Segregates in Silicon P-N JunctionsJournal of the Electrochemical Society, 1965
- Microplasmas in Silicon p-n JunctionsJapanese Journal of Applied Physics, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Visible Light Emission and Microplasma Phenomena in Silicon p–n Junction, I.Journal of the Physics Society Japan, 1960
- Microplasma Fluctuations in SiliconJournal of Applied Physics, 1959
- Effect of Dislocations on Breakdown in Silicon p-n JunctionsJournal of Applied Physics, 1958
- Visible Light from a SiliconJunctionPhysical Review B, 1955