New graded band-gap picosecond phototransistor

1 January 1983

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 42 (1) , 93-95
https://doi.org/10.1063/1.93739

Abstract

We demonstrate the first phototransistor with a graded band‐gap base. The AlGaAs/GaAs wide gap emitter molecular beam epitaxial structure, when operated at zero bias, behaves as an ultrahigh speed photodetector. The pulse response is symmetric with an intrinsic rise time ≤20 ps and a full width at half‐maximum ≤40 ps. When operated at reverse bias the detector behaves as a phototransistor. The response time of this device demonstrates that the base transit time is greatly reduced by the quasi‐electric field in the base. This feature combined with the abrupt wide gap emitter may be used to implement new high‐speed transistors.

Keywords

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