Electron drift velocity measurement in compositionally graded AlxGa1−xAs by time-resolved optical picosecond reflectivity
- 1 September 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (5) , 470-472
- https://doi.org/10.1063/1.93535
Abstract
We have measured for the first time the velocity of minority‐carrier electrons in a heavily doped (p = 2×1018 cm−3) molecular beam epitaxy grown compositionally graded (0.12 eV/μm) AlxGa1−x As layer. The drift velocity is determined to be ve = 2.3×106 cm/s in a quasi‐electric field of 1.2 kV/cm.Keywords
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