Growth of MoSe2 thin films with Van der Waals epitaxy
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 1033-1037
- https://doi.org/10.1016/0022-0248(91)91127-v
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- RHEED Intensity Oscillation during Epitaxial Growth of Layered MaterialsJapanese Journal of Applied Physics, 1990
- van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2Journal of Applied Physics, 1990
- Ultrasharp interfaces grown with Van der Waals epitaxySurface Science, 1986
- Anomalous Corrugations in Scanning Tunneling Microscopy: Imaging of Individual StatesPhysical Review Letters, 1986
- Summary Abstract: Fabrication of ultrathin heterostructures with van der Waals epitaxyJournal of Vacuum Science & Technology B, 1985