RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11A) , L2096
- https://doi.org/10.1143/jjap.29.l2096
Abstract
Diffracted beam intensities in reflection high energy electron diffraction (RHEED) have been observed to oscillate during the epitaxial growth of NbSe2 and MoSe2 on GaAs(111) substrates. This is the first observation of RHEED oscillation in layered materials, to the author's knowledge. Monolayer- and bilayer-mode oscillations have been observed at different diffraction points. The existence of the bilayer-mode oscillation leads to the determination of the polytype of the grown films. It has also been shown that the antiphase portion of the grown film is considerably small.Keywords
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