Intensity oscillations of reflection high-energy electron diffraction during silicon molecular beam epitaxial growth
- 15 September 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (6) , 617-619
- https://doi.org/10.1063/1.96091
Abstract
Reflection high-energy electron diffraction (RHEED) intensity oscillations during Si molecular beam epitaxy (MBE) are observed for the first time. It is revealed that stable RHEED intensity oscillation exists during the MBE growth of a single-element semiconductor. The stable oscillations were observed only after preheating treatments. The substrate temperatures for the oscillation were from as low as room temperature to 1000 °C. One period of the oscillation corresponds to atomic-layer or biatomic-layer growth on the concerned surface. Oscillation of more than 2200 periods (∼6000 Å) was observed. One oscillation period can be as slow as 38 min.Keywords
This publication has 8 references indexed in Scilit:
- Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillationsSuperlattices and Microstructures, 1985
- Phase-Locked Epitaxy Using RHEED Intensity OscillationJapanese Journal of Applied Physics, 1984
- RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)Journal of Vacuum Science & Technology B, 1984
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Epitaxy of Si(111) as studied with a new high resolving LEED systemSurface Science, 1982
- Comments on “red intensity oscillations during MBE of GaAs”Surface Science Letters, 1981
- Oscillations in the surface structure of Sn-doped GaAs during growth by MBESurface Science, 1981