Comments on “red intensity oscillations during MBE of GaAs”
- 1 July 1981
- journal article
- other
- Published by Elsevier in Surface Science Letters
- Vol. 108 (2) , L444-L446
- https://doi.org/10.1016/0167-2584(81)90112-2
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Transients in the rate of crystal growthJournal of Crystal Growth, 1980
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- Comparative LEED and RHEED examination of stepped surfaces; Application to Cu(111) and GaAs(100) vicinal surfacesSurface Science, 1977