Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy
- 1 November 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 44 (4) , 387-397
- https://doi.org/10.1016/0022-0248(78)90004-0
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
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