Iron doping in gallium arsenide by molecular beam epitaxy
- 15 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (12) , 1094-1096
- https://doi.org/10.1063/1.91884
Abstract
Iron‐doped GaAs layers have been grown by molecular beam epitaxy (MBE) over a substrate temperature range of 460–540 °C with incident 56Fe levels of 2×108–2×1011 atoms cm−2 sec−1. Photoluminescence studies indicate that iron can be incorporated on Ga sites in MBE GaAs. A pronounced accumulation of Fe at the outer epi‐layer surface is observed in secondary‐ion mass spectroscopy profiles of heavily doped samples. This accumulation leads to appreciable donor compensation in n‐type GaAs subsequently grown.Keywords
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