Deep emission centers in Ge-implanted GaAs
- 1 November 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (11) , 7165-7167
- https://doi.org/10.1063/1.325826
Abstract
Photoluminescence emission spectra from Ge‐implanted layers in GaAs were studied with respect to changes of exciting wavelength, excitation intensity, temperature, and the depth of the implanted layers. Deeper emissions are dominant in the near‐surface region because vacancies and their complexes with Ge play important roles in the radiative processes. Emission due to donor‐acceptor pair transition involving the Ge acceptor is present in all Ge‐implanted layers. The binding energy of the Ge acceptor is estimated to be 40±3 meV from the temperature dependence of the emission due to conduction‐band–to–Ge‐acceptor transitions. High‐temperature annealing at 900–950 °C with a Si3N4 cap is needed to increase the Ge activation which produces p‐type conduction.This publication has 10 references indexed in Scilit:
- Excitation-dependent emission in Mg-, Be-, Cd-, and Zn-implanted GaAsJournal of Applied Physics, 1977
- Electrical profiling and optical activation studies of Be-implanted GaAsJournal of Applied Physics, 1977
- A comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAsJournal of Physics D: Applied Physics, 1977
- Photoluminescence from Mg-implanted GaAsApplied Physics Letters, 1977
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °CApplied Physics Letters, 1975
- Adsorption of carbon monoxide on rutheniumJournal of Applied Physics, 1973
- Luminescence due to Ge Acceptors in GaAsJournal of Applied Physics, 1968
- Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor CenterPhysical Review B, 1968
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962