Electrical profiling and optical activation studies of Be-implanted GaAs

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Abstract
Differential resistivity and Hall‐effect measurements have been utilized to study the annealing behavior and electrical carrier‐distribution profiles of Be‐implanted GaAs. A maximum of 90–100% electrical activation occurs during 900 °C anneals for implanted Be concentrations less than ∼5×1018 cm−3. For higher fluences, however, a heavily concentration‐dependent diffusion is observed, and the measured electrical activation is complicated by outdiffusion of Be into the Si3N4 encapsulant. In these cases, a maximum in the electrical activation appears for annealing near 700 °C. Low‐temperature (5 °K) photoluminescence substantiates previous findings that 900 °C annealing results in maximum optical activation and lattice recovery.