Uniform-carrier-concentration p-type layers in GaAs produced by beryllium ion implantation
- 15 June 1976
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (12) , 706-708
- https://doi.org/10.1063/1.88644
Abstract
Multiple‐energy Be+ ion implantation has been used to create uniform‐carrier‐concentration p‐type layers (≳1.5 μm thick) in GaAs. The implanted samples were annealed at 900 °C using pyrolytic Si3N4 as an encapsulant. High activation of the implanted Be was observed. On samples with implanted hole concentrations of 2×1018/cm3, the measured carrier concentration as a function of depth is in good agreement with that expected from LSS range theory. For higher doses, diffusion of the implanted Be was observed. p+n−n+ junctions formed by implantation into undoped epitaxial material have low leakage currents and sharp breakdowns at average electric fields in the n− region of 1.5×105 V/cm.Keywords
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