Low-loss GaAs p+nn+ three-dimensional optical waveguides

Abstract
Two types of low‐loss single‐mode p+nn+ GaAs three‐dimensional waveguides have been successfully fabricated and their attenuation coefficients measured. The devices are an optical stripline and a new device, the channel‐stop strip guide. The channel‐stop strip guides have losses of 0.8 cm−1 at 1.06 μm and 1.1 cm−1 at 0.920 μm; the losses for the optical striplines are 1.2 cm−1 at 1.06 μm and 1.7 cm−1 at 0.920 μm. A first‐order loss calculation has yielded attenuation coefficients within 25% of these measured values. Both structures have an n+ substrate, an n epitaxial layer for guiding, and p+ regions to laterally confine the light. The p+ regions have a uniform concentration and are formed by multiple‐energy Be+‐ion implantation; the p+n junctions show sharp high‐voltage breakdowns at average electric fields in the n layer of 1.5×105 V/cm.

This publication has 9 references indexed in Scilit: