Low-noise and high-power GaAs microwave field-effect transistors prepared by molecular beam epitaxy
- 1 January 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (1) , 346-349
- https://doi.org/10.1063/1.323385
Abstract
The low‐noise FET’s prepared on molecular‐beam‐epitaxial (MBE) layers have a noise figure of 1.9 dB with a corresponding gain of 11 dB at 6 GHz. The power FET’s can produce 1.3 W at 4.4 GHz (1‐dB compression) with a gain of 10 dB and a power‐added efficiency of 35%. The influence of substrate preparation on Hall mobility for very thin layers was also studied and there is no evidence of Cr diffusion from the substrate at the MBE growth temperature.This publication has 5 references indexed in Scilit:
- GaAs MESFET prepared by molecular beam epitaxy (MBE)Applied Physics Letters, 1976
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- A feedback method for investigating carrier distributions in semiconductorsIEEE Transactions on Electron Devices, 1972
- Growth of Periodic Structures by the Molecular-Beam MethodApplied Physics Letters, 1971
- Film Deposition by Molecular-Beam TechniquesJournal of Vacuum Science and Technology, 1971