Molecular beam epitaxial GaAs layers for MESFET’s
- 1 December 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (11) , 746-748
- https://doi.org/10.1063/1.88926
Abstract
Tin‐doped GaAs layers on semi‐insulating substrates have been grown by molecular beam epitaxy and made into field effect transistor devices by two different technologies. Best devices gave 5.6 dB gain with associated minimum noise of 3.3 dB at 10 GHz and showed no signs of hysteresis even without a buffer layer to reduce interface state densities.Keywords
This publication has 2 references indexed in Scilit:
- GaAs MESFET prepared by molecular beam epitaxy (MBE)Applied Physics Letters, 1976
- GaAs FET Prepared with Molecular Beam Epitaxial FilmsJapanese Journal of Applied Physics, 1975