Island Formation and Critical Thickness in Heteroepitaxy
- 14 April 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 78 (15) , 3027
- https://doi.org/10.1103/physrevlett.78.3027
Abstract
A Comment on the Letter by Y. Chen and J. Washburn, Phys. Rev. Lett. 77, 4046 (1996). The authors of the Letter offer a Reply.Keywords
This publication has 4 references indexed in Scilit:
- Structural Transition in Large-Lattice-Mismatch HeteroepitaxyPhysical Review Letters, 1996
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Growth of germanium films on Si(001) substratesPhysical Review B, 1993
- Stress-induced layer-by-layer growth of Ge on Si(100)Physical Review B, 1991