Profiling of semiconductor surface layers by heavy ion TOF-E-ERD
- 1 June 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 79 (1-4) , 518-520
- https://doi.org/10.1016/0168-583x(93)95403-r
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Hydrogen profiles of thin PVD silicon nitride films using elastic recoil detection analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Stoichiometry and profiling of surface layers by means of TOF-E ERDA and RBSNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Light element depth profiling using elastic recoil detectionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- TOF ERD experiments using a 10 MeV 35Cl beamNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Mass resolution of recoil fragment detector telescopes for 0.05–0.5 A MeV heavy recoiling fragmentsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1991
- Time-of-flight spectrometry for materials analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- High resolution depth profiling of light elements in high atomic mass materialsNuclear Instruments and Methods in Physics Research, 1983
- Time-of-flight system for profiling recoiled light elementsNuclear Instruments and Methods in Physics Research, 1983