Inhomogeneous gain saturation in a mode-locked semiconductor laser
- 18 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (3) , 169-171
- https://doi.org/10.1063/1.100164
Abstract
The saturation of the light-dc prebias current characteristic of an actively mode-locked GaAs/AlGaAs semiconductor laser with external resonator reveals a pronounced dependence on lasing wavelength and peak intensity of the mode-locked pulses. The latter effect is attributed to inhomogeneous gain saturation.Keywords
This publication has 13 references indexed in Scilit:
- Gain nonlinearities in semiconductor lasers: Theory and application to distributed feedback lasersIEEE Journal of Quantum Electronics, 1987
- Picosecond dynamics of a gain-switched InGaAsP laserIEEE Journal of Quantum Electronics, 1987
- Pulse shortening of actively mode-locked diode lasers by wavelength tuningApplied Physics Letters, 1987
- Directly controlled deposition of antireflection coatings for semiconductor lasersApplied Optics, 1987
- Observation of gain compression in a GaAlAs diode laser through a picosecond transmission measurementApplied Physics Letters, 1986
- Effect of gain nonlinearities on period doubling and chaos in directly modulated semiconductor lasersApplied Physics Letters, 1986
- Effect of nonlinear gain reduction on semiconductor laser wavelength chirpingApplied Physics Letters, 1986
- Circuit modeling of the effect of diffusion on damping in a narrow-stripe semiconductor laserIEEE Journal of Quantum Electronics, 1983
- Longitudinal mode self-stabilization in semiconductor lasersJournal of Applied Physics, 1982
- Active mode locking of double heterostructure lasers in an external cavityJournal of Applied Physics, 1981