Pulse shortening of actively mode-locked diode lasers by wavelength tuning
- 4 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (18) , 1213-1215
- https://doi.org/10.1063/1.97912
Abstract
The pulse width of an actively mode-locked GaAs/AlGaAs laser diode in an external cavity configuration is continuously decreased from 22 to 7 ps by tuning the laser wavelength from the gain maximum close to the high-energy cutoff of the gain profile. This wavelength-dependent pulse shortening can be explained by the dynamics of the excited electron-hole plasma.Keywords
This publication has 14 references indexed in Scilit:
- Directly controlled deposition of antireflection coatings for semiconductor lasersApplied Optics, 1987
- Observations of subpicosecond dynamics in GaAlAs laser diodesApplied Physics Letters, 1986
- Passive mode locking of a semiconductor diode laserOptics Letters, 1984
- Tunable mode-locked semiconductor lasers incorporating Brewster-angled diodesOptics Communications, 1984
- Generation of tunable single-mode picosecond pulses from an AlGaAs semiconductor laser with grating feedbackApplied Physics Letters, 1983
- Picosecond pulse generation from a synchronously pumped mode-locked semiconductor laser diodeApplied Physics Letters, 1982
- Active mode locking of double heterostructure lasers in an external cavityJournal of Applied Physics, 1981
- Theory of modelocking of a laser diode in an external resonatorJournal of Applied Physics, 1980
- Bandwidth-limited picosecond pulse generation in an actively mode-locked GaAlAs diode laserApplied Physics Letters, 1980
- Reflectivity of mode at facet and oscillation mode in double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1972