Theory of modelocking of a laser diode in an external resonator
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (8) , 4042-4049
- https://doi.org/10.1063/1.328253
Abstract
Laser diodes modelocked to date are gain modulated in an external resonator. The reflection from the diode face internal to the resonator causes a dependence of gain upon frequency that cannot be described by a simple bell‐shaped function. Previous analyses treating modelocking by modulation of loss are generalized to treat modulation of gain with a general frequency dependence. We arrive at a limit on pulse width achievable with gain modulation of a laser diode in an external resonator and evaluate the limit for typical parameters.This publication has 5 references indexed in Scilit:
- Effect of noise on active mode locking of a diode laserIEEE Journal of Quantum Electronics, 1979
- C.W. modelocking of a GaInAsP diode laserElectronics Letters, 1978
- A theory of forced mode lockingIEEE Journal of Quantum Electronics, 1975
- A coupled-mode analysis of mode locking in homogeneously broadened lasersIEEE Journal of Quantum Electronics, 1972
- Quantum Noise. IV. Quantum Theory of Noise SourcesPhysical Review B, 1966