Tunable mode-locked semiconductor lasers incorporating Brewster-angled diodes
- 15 January 1984
- journal article
- Published by Elsevier in Optics Communications
- Vol. 48 (6) , 427-431
- https://doi.org/10.1016/0030-4018(84)90038-5
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Passive mode locking of buried heterostructure lasers with nonuniform current injectionApplied Physics Letters, 1983
- 10 kHz linewidth 1.5 μm InGaAsP external cavity laser with 55 nm tuning rangeElectronics Letters, 1983
- Anomalous tuning of single mode AlGaAs diode lasersIEEE Journal of Quantum Electronics, 1982
- Experimental assessment of a 140 Mbit/s coherent optical receiver at 1.52 μmElectronics Letters, 1982
- Megahertz linewidth from a 1.5 μm semiconductor laser with HeNe laser injectionElectronics Letters, 1982
- Broadband tunable picosecond semiconductor lasersApplied Physics Letters, 1981
- Turnable cw bulk semiconductor platelet laserApplied Physics Letters, 1981
- Spectral characteristics of external-cavity controlled semiconductor lasersIEEE Journal of Quantum Electronics, 1981
- Bandwidth-limited picosecond pulse generation in an actively mode-locked GaAlAs diode laserApplied Physics Letters, 1980
- Picosecond pulse generation with a cw GaAlAs laser diodeApplied Physics Letters, 1978