Passivation of Si nanocrystals in SiO2: Atomic versus molecular hydrogen
- 29 December 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (26) , 5512-5514
- https://doi.org/10.1063/1.1637130
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Kinetics ofpassivation of Si nanocrystals inPhysical Review B, 2003
- Photoluminescence from Si nanocrystals in silica: The effect of hydrogenNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001
- Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2Applied Physics Letters, 2001
- Effect of hydrogen on the photoluminescence of Si nanocrystals embedded in a SiO2 matrixApplied Physics Letters, 2001
- Rate constants for the reaction of H2 with defects at the SiO2/Si(111) interfaceJournal of Applied Physics, 2000
- Effects of hydrogen in the annealing environment on photoluminescence from Si nanoparticles in SiO2Journal of Applied Physics, 1999
- The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
- Effect of annealing and H2 passivation on the photoluminescence of Si nanocrystals in SiO2Thin Solid Films, 1997
- Theory of radiative and nonradiative transitions for semiconductor nanocrystalsJournal of Luminescence, 1996
- Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2Applied Physics Letters, 1996